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TS13005CI

TS13005CI

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS13005CI - High Voltage NPN Transistor - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TS13005CI 数据手册
TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1 . Ba s e 2. Collecto r 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 4A 1V @ IC / IB = 4A / 1A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Trans istor Ordering Information Part No. TS13005C Z C0 TS13005C I C 0 Package TO-220 ITO-220 Packi ng 50pc s / T ube 50pc s / T ube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Base Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, D uty ≤2% DC Pulse DC Pulse TO-220 ITO-220 Symbol VCBO VCEO VEBO IC IB Ptot TJ TSTG Limit 700V 400V 9 4 8 2 4 75 30 +1 5 0 - 55 to +150 Unit V V V A A W o o C C 1/ 6 Version: B07 TS13005 High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage IC =1mA, IB =0 IC =10mA, IE =0 IE =0.1mA, IC =0 VCE =400V, IB=0 VCB =700V, IE =0 VEB = 9V, IC =0 IC=1A, IB =0.2A IC=2A, IB =0.5A IC=4A, IB =1A Base- Emitter Saturation Voltage DC Current Gain Dynamic Frequency Output Capacitance VCE =10V, IC =0.5A VCB =10V, f =0.1MHz VCC =125V, IC =2A, IB1 =IB2=0.4A, tP =25uS Duty Cycle ≤1% fT C ob tON tSTG tf 4 -----65 0.3 2.2 0.3 --0.7 3 0.5 MHz pF uS uS uS IC=1A, IB =0.2A IC=2A, IB =0.5A VCE =5V, IC = 1A VCE =5V, IC = 2A BVCBO BVCEO BVEBO ICEO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 hFE 700 400 9 --------15 8 ----------------250 1 1 0.5 0.6 1 1.2 1.6 32 40 V V V V V uA mA mA Conditi ons Symbol Mi n Ty p Max Unit Resistive Load Turn On Time Storage Time Fall Time Note: pulse test: pulse width ≤ 300uS, duty cycle ≤ 2% 2/ 6 Version: B07 TS13005 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static C haract erist ics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derat ing Figure 5. Reverse B ias SOA Figure 6. Safety Operat ing Area 3/ 6 Version: B07 TS13005 High Voltage NPN Transistor TO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O P TO-220 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 9.31 10.550 0.366 0.415 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 2.22 3.22 0.087 0.127 0.78 0.98 0.030 0.038 2.34 2.65 0.092 0.104 4.69 5.31 0.184 0.209 12.32 13.88 0.485 0.546 8.74 9.26 0.344 0.364 15.07 16.07 0.593 0.632 4.35 4.65 0.171 0.183 1.16 1.40 0.045 0.055 27.39 30.35 1.078 1.194 1.785 2.675 0.070 0.105 1.50 1.75 0.059 0.068 5.75 7.65 0.226 0.301 Marking Diagram Y M = Year Code = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oc t, K=Nov , L=Dec) = Lo t C ode L 4/ 6 Version: B07 TS13005 High Voltage NPN Transistor ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O ITO-220 D IMENSION MILLIMETER S INCH ES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 ( typ.) ∮0.055 ( typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Marking Diagram Y M = Year Code = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oc t, K=Nov , L=Dec) = Lo t C ode L 5/ 6 Version: B07 TS13005 High Voltage NPN Transistor Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/ 6 Version: B07
TS13005CI
物料型号: - TS13005CZ C0:封装为TO-220,每管50片。 - TS13005CI C0:封装为ITO-220,每管50片。

器件简介: TS13005是一款台湾半导体制造的高压NPN晶体管,具有高电压和高速开关的特性,适用于多种电子设备。

引脚分配: - 1. Base(基极) - 2. Collector(集电极) - 3. Emitter(发射极)

参数特性: - 集电极-基极电压(VCBO):700V - 集电极-发射极电压(VCEO):400V - 发射极-基极电压(VEBO):9V - 直流集电极电流脉冲(Ic):4A - 集电极-发射极饱和电压(VCE(SAT)):1V @ Ic/Ib = 4A/1A

功能详解: - TS13005采用硅三重扩散型NPN硅晶体管结构,具有高电压和高速开关功能,适用于需要高耐压和高电流的应用场合。

应用信息: 产品规格如有变更,恕不另行通知。TSC或其代表不承担任何错误或不准确的责任。所含信息仅供参考,不包含任何知识产权许可。除非在TSC销售条款中另有规定,TSC不承担任何责任,不提供任何明示或暗示的保证,包括但不限于对适销性、特定用途适用性或非侵犯任何专利、版权或其他知识产权的保证。这些产品不适用于医疗、救生或维持生命的应用。

封装信息: - TO-220和ITO-220两种封装形式,具体尺寸和标记图在文档中有详细描述。
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