TS13007BCZ

TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1 . Ba s e 2. Collecto r 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @ IC / IB = 8A / 2A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Trans istor Ordering Information Part No. TS13007BCZ C0 Package TO-220 Packi ng 50pc s / T ube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Base Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, D uty ≤2% DC Pulse DC Pulse Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Limit 700V 400V 9 8 16 4 8 80 +1 5 0 - 55 to +150 Unit V V V A A W o o C C 1/ 5 Version: A07 TS13007B High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage IC =1mA, IB =0 IC =10mA, IE =0 IE =1mA, IC =0 VCE =400V, IB=0 VCB =700V, IE =0 VEB = 9V, IC =0 IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCE =5V, IC = 2A VCE =5V, IC = 5A VCE =10V, IC =0.5A VCB =10V, f =0.1MHz BVCBO BVCEO BVEBO ICEO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 hFE 700 400 9 --------20 5 4 ------------------180 0.06 0.45 2.8 0.3 ---1 1 1 1 1.5 3 1.2 1.6 40 30 --0.1 1 3 0.7 MHz pF uS uS uS uS V V V mA mA mA V Conditi ons Symbol Mi n Ty p Max Unit Base- Emitter Saturation Voltage DC Current Gain Dynamic Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time V fT C ob td tr tSTG tf Resist ive Load Switching Time (Ratings) VCC =125V, IC =5A, IB1 =IB2=1A, tP =25uS Duty Cycle ≤1% Note: pulse test: pulse width ≤300uS, duty cycle ≤2% 2/ 5 Version: A07 TS13007B High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static C haract erist ics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derat ing 3/ 5 Version: A07 TS13007B High Voltage NPN Transistor TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y M = Year Code = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oc t, K=Nov , L=Dec) = Lo t C ode L 4/ 5 Version: A07 TS13007B High Voltage NPN Transistor Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/ 5 Version: A07