TS13007B
High Voltage NPN Transistor
TO-220
Pin Definition: 1. Base 2. Collector 3. Emitter
PRODUCT SUMMARY
BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @ IC / IB = 8A / 2A
Features
● ● High Voltage High Speed Switching
Block Diagram
Structure
● ● Silicon Triple Diffused Type NPN Silicon Transistor
Ordering Information
Part No.
TS13007BCZ C0
Package
TO-220
Packing
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC=25ºC Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, Duty ≤2% DC Pulse DC Pulse
Symbol
VCBO VCEO VEBO IC IB PTOT TJ TSTG
Limit
700V 400V 9 8 16 4 8 80 +150 - 55 to +150
Unit
V V V A A W
o o
C C
1/5
Version: A07
TS13007B
High Voltage NPN Transistor
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC =1mA, IB =0 IC =10mA, IE =0 IE =1mA, IC =0 VCE =400V, IB=0 VCB =700V, IE =0 VEB = 9V, IC =0 IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCE =5V, IC = 2A VCE =5V, IC = 5A VCE =10V, IC =0.5A VCB =10V, f =0.1MHz BVCBO BVCEO BVEBO ICEO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 hFE 700 400 9 --------20 5 4 ------------------180 0.06 0.45 2.8 0.3 ---1 1 1 1 1 .5 3 1.2 1.6 40 30 --0.1 1 3 0 .7 MHz pF uS uS uS uS V V V mA mA mA V
Conditions
Symbol
Min
Typ
Max
Unit
Base-Emitter Saturation Voltage DC Current Gain Dynamic Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time
V
fT Cob td tr tSTG tf
Resistive Load Switching Time (Ratings) VCC =125V, IC =5A, IB1 =IB2=1A, tP =25uS Duty Cycle ≤1%
Note: pulse test: pulse width �300uS, duty cycle �2%
2/5
Version: A07
TS13007B
High Voltage NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT
Figure 4. Power Derating
3/5
Version: A07
TS13007B
High Voltage NPN Transistor
TO-220 Mechanical Drawing
DIM A B C D E F G H J K L M N O P
TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270
Marking Diagram
Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code
L
4/5
Version: A07
TS13007B
High Voltage NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A07
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