TS4148RWG

TS4148RWG

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS4148RWG - 350mW High Speed SMD Switching Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
TS4148RWG 数据手册
TS4148 RWG 350mW High Speed SMD Switching Diode Small Signal Diode 1005 A D B Features Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant Halogen free C E Unit (mm) Min 2.40 1.10 0.70 Typ. Typ. Max 2.60 1.30 0.90 0.50 1.00 Unit (inch) Min Max 0.095 0.102 0.043 0.051 0.027 0.035 Typ. Typ. 0.020 0.040 Mechanical Data Case :1005 standard package, molded plastic Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight : 0.006 gram (approximately) Dimensions A B C D E Ordering Information Part No. TS4148 RWG Package 1005 Packing 4Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Non-Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width= 1 μsec Pulse Width= 1 msec Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range RθJA TJ, TSTG IFSM 4.0 1.0 500 -40 to + 125 °C/W °C A Symbol PD VRSM VRRM IFRM IO Value 350 100 75 300 150 Units mW V V mA mA Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance Reverse Recovery Time IF= V R= V R= (Note3) (Note 2) 50mA 20V 75V Symbol V(BR) VF IR CJ Trr Min Max 75 1.00 25 2.5 4.0 4 Units V V nA μA pF ns VR=0, f=1.0MHz Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : I R=100μA Notes:3. Test Condition : I F=IR=30mA, RL=100Ω, IRR=3mA Version : D10 TS4148 RWG 350mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics Instantaneous Forward Current (mA) 1000 100 Ta=25°C 10 1 0.1 100 FIG 2 Reverse Current vs Reverse Voltage Reverse Current (uA) 10 Ta=25°C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.01 0 20 40 60 80 100 120 Instantaneous Forward Voltage (V) FIG 3 Admissible Power Dissipation Curve 350 280 210 140 70 0 0 25 50 75 100 125 150 5 Reverse Voltage (V) FIG 4 Typical Junction Capacitance Junction Capacitance (pF) Power Dissipation (mW) 4 3 2 1 0 0 5 10 15 20 25 30 35 Ambient Temperature (°C) Reverse Voltage (V) FIG 5 Forward Resistance vs. Forward Current 10000 Dynamic Forward Resistance (Ώ) 1000 100 10 1 0 0 Forward Current (mA) 1 10 100 Version : D10
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