TS4148RYG

TS4148RYG

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS4148RYG - 400mW High Speed SMD Switching Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
TS4148RYG 数据手册
TS4148 RYG 400mW High Speed SMD Switching Diode Small Signal Diode 0805 A Features Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant Halogen free B C D E Mechanical Data Case :0805 standard package, molded plastic Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight : 0.006 gram (approximately) Dimensions A B C D E Unit (mm) Min 1.80 1.05 0.25 0.75 1.30 Max 2.20 1.45 0.65 0.95 0.90 Unit (inch) Min Max 0.071 0.086 0.041 0.057 0.010 0.026 0.030 0.037 0.051 0.034 Ordering Information Part No. TS4148 RYG Package 0805 Packing 5Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Non-Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current Tp=1sec square waveform 8.3ms single half sine waveform Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range R JA TJ, TSTG IFSM 0.5 2.0 375 -65 to + 175 °C/W °C A Symbol PD VRSM VRRM IFRM IO Value 400 100 75 300 150 Units mW V V mA mA Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance Reverse Recovery Time IF= V R= V R= (Note3) (Note 2) 10mA 20V 75V Symbol V(BR) VF IR CJ Trr Min Max 75 1.00 25 5 4.0 4 Units V V nA A pF ns VR=0, f=1.0MHz Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : I R=100 A Notes:3. Test Condition : I F=10mA, IR=1mA,RL=100 Version : G11 TS4148 RYG 400mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics Instantaneous Forward Current (A) 1000 100 Ta=25°C 10 Ta=100° 1 0.1 100 FIG 2 Reverse Current vs Reverse Voltage Reverse Current (uA) 10 Ta=25°C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.01 0 20 40 60 80 100 120 Instantaneous Forward Voltage (V) FIG 3 Admissible Power Dissipation Curve 500 1.2 Reverse Voltage (V) FIG 4 Typical Junction Capacitance Junction Capacitance (pF) 0 25 50 75 100 125 150 175 200 Power Dissipation (mW) 400 300 200 100 0 1.1 1 0.9 0.8 0.7 0.6 0 2 4 6 8 10 Ambient Temperature (°C) Reverse Voltage (V) FIG 5 Forward Resistance vs. Forward Current 10000 Dynamic Forward Resistance ( ) 1000 100 10 1 0 0 1 10 100 Forward Current (mA) Version : G11
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