TS4148RZ

TS4148RZ

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS4148RZ - 150mW High Speed SMD Switching Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TS4148RZ 数据手册
TS4148 RZ 150mW High Speed SMD Switching Diode Small Signal Diode 0603 A D B Features Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C E Unit (mm) Min 1.60 0.80 0.70 Typ. Typ. Max 1.80 1.00 0.85 0.45 0.70 Unit (inch) Min Max 0.063 0.071 0.031 0.039 0.027 0.033 Typ. Typ. 0.018 0.028 Mechanical Data Case :0603 standard package, molded plastic Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight : 0.003 gram (approximately) Dimensions A B C D E Ordering Information Part No. TS4148 RZ Package 0603 Packing 4Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Non-Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width= 1 μsec Pulse Width= 1 msec Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range RθJA TJ, TSTG IFSM 4.0 1.0 666 -40 to + 125 °C/W °C A Symbol PD VRSM VRRM IFRM IO Value 150 100 75 300 150 Units mW V V mA mA Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance Reverse Recovery Time IF= V R= V R= (Note3) (Note 2) 50mA 20V 75V Symbol V(BR) VF IR CJ Trr Min Max 75 1.00 25 2.5 4.0 4 Units V V nA μA pF ns VR=0, f=1.0MHz Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : I R=100μA Notes:3. Test Condition : I F=IR=30mA, RL=100Ω, IRR=3mA Version : C09 TS4148 RZ 150mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics Instantaneous Forward Current (mA) 1000 100 Ta=25°C 10 1 0.1 100 FIG 2 Reverse Current vs Reverse Voltage Reverse Current (uA) 10 Ta=25°C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.01 0 20 40 60 80 100 120 Instantaneous Forward Voltage (V) FIG 3 Admissible Power Dissipation Curve 150 120 90 60 30 0 0 25 50 75 100 125 150 5 Reverse Voltage (V) FIG 4 Typical Junction Capacitance Junction Capacitance (pF) Power Dissipation (mW) 4 3 2 1 0 0 5 10 15 20 25 30 35 Ambient Temperature (°C) Reverse Voltage (V) FIG 5 Forward Resistance vs. Forward Current 10000 Dynamic Forward Resistance (Ώ) 1000 100 10 1 0 0 Forward Current (mA) 1 10 100 Version : C09
TS4148RZ
1. 物料型号: - 型号:TS4148 RZ - 封装:0603(小信号二极管)

2. 器件简介: - 台湾半导体生产的150mW高速表面贴装开关二极管,属于小型信号二极管。

3. 引脚分配: - 极性由阴极带表示。

4. 参数特性: - 特点: - 适合小型表面安装。 - 极薄/无引线封装。 - 高贴装能力,强浪涌电流,高可靠性。 - 无铅版本,符合RoHS标准。 - 绿色化合物(无卤素),包装代码后缀为"G",日期代码前缀为"G"。 - 机械数据: - 0603标准封装,模塑塑料。 - 端子:镀金,可焊性,符合MIL-STD-750方法2026。 - 高温焊接保证:260°C/10秒。

5. 功能详解应用信息: - 该二极管工作在25°C环境温度下,除非另有说明。 - 最大额定值: - 功率耗散:150mW - 非重复峰值反向电压:100V - 重复峰值反向电压:75V - 重复峰值正向电流:300mA - 平均正向电流:150mA - 非重复峰值正向浪涌电流脉冲宽度=1微秒:4.0A - 脉冲宽度=1毫秒:1.0A - 热阻(结到环境):666°C/W - 结温和储存温度范围:-40至+125°C - 电气特性: - 反向击穿电压(测试条件:IR=100μA) - 正向电压(IF=50mA):1.00V - 反向漏电流(VR=20V):25nA - 反向漏电流(VR=75V):2.5μA - 结电容(VR=0, f=1.0MHz):4.0pF - 反向恢复时间(测试条件:IF=IR=30mA, RL=100Ω, la=3mA):4ns

6. 封装信息: - 包装:4Kpcs/7英寸卷轴。
TS4148RZ 价格&库存

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