TS4448RW

TS4448 RW 350mW High Speed SMD Switching Diode Small Signal Diode 1005 A D B C Features Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code E Dimensions A B C D E Unit (mm) Min 2.40 1.10 0.70 Typ. Typ. Max 2.60 1.30 0.90 0.50 1.00 Unit (inch) Min 0.043 0.027 Typ. Typ. Max 0.051 0.035 0.02 0.04 0.095 0.102 Mechanical Data Case :1005 standard package, molded plastic Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed High temperature soldering guaranteed: 260 °C/10s Polarity : Indicated by cathode band Weight : 0.006 gram (approximately) Ordering Information Part No. TS4448 RW Package 1005 Packing 4Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width= Pulse Width= 1 μsec IFSM RθJA TJ, TSTG 2.0 1.0 500 -40 to + 125 °C/W °C A 8.3 msec Symbol PD VRRM IO Value 200 100 125 Units mW V mA Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance Reverse Recovery Time IF= IF= VR= VR= (Note3) (Note 2) 5mA 100mA 20V 80V Symbol V(BR) VF IR CJ Trr Min 0.62 Max 80 0.72 1.00 25 100 9.0 9 Units V V nA pF ns VR=0, f=1.0MHz Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : I R=100μA Notes:3. Test Condition : I F=IR=10mA, RL=100Ω, IRR=1mA Version : C09 TS4448 RW 350mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics 1000 100.00 FIG 2 Reverse Current vs Reverse Forward Current (mA) 100 Reverse Current (uA) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Ta=25°C 10 1 0.1 0.01 0 0.2 0.4 10.00 1.00 0.10 0.01 0 20 40 60 80 100 120 140 Forward Voltage (V) Reverse Voltage (V) FIG 3 Admissible Power Disspation Curve 350 1.2 FIG 4 Typical Junction Capacitance FIG 4 Admissible Power Disspation Curve Junction Capacitance (pF) Power Dissipation (mW) 280 210 140 70 0 0 25 50 75 100 125 150 1.1 1 0.9 0.8 0.7 0.6 0 2 4 6 8 10 Ambient Tempeture (°C) Reverse Voltage (V) FIG 5 Forward Resistance vs. Forward Current 10000 Forward Resistance (Ώ) 1000 100 10 1 0.0 0.1 1.0 10.0 100.0 Version : C09