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TS4B03G

TS4B03G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS4B03G - Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers - Taiwan Semiconductor Company, ...

  • 数据手册
  • 价格&库存
TS4B03G 数据手册
TS4B01G - TS4B07G Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers TS4B .147(3.7) 0 .118(3.0)X45 .996(25.3) .972(24.7) .130(3.3) Features UL Recognized File # E-96005 Glass passivated junction Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters Laboratory Flammability Classification 94V-0 Surge overload rating to 120 amperes peak High case dielectric strength of 2000VRMS High temperature soldering guaranteed: 260 oC / 10 seconds at 5 lbs. ( 2.3 Kg ) tension .602(15.3) .579(14.7) .382(9.7) .366(9.3) .134(3.4) .122(3.1) .176(4.37) .156(3.96) .068(1.73) .060(1.52) .043(1.1) .035(0.9) .709(18) .669(17) .303(7.7) .087(2.2) .071(1.8) .287(7.3) .030(0.75) .022(0.55) Mechanical Data Case: Molded plastic W eight: 0. 15 ounce, 4 grams Mounting torque: 5 in. lbs. Max. Dimensions in inches and (millimeters) Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC = 115 oC Peak Forward Surge Current, 8.3 ms Single Half Sne-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 2.0A @ 4.0A Maximum Ratings and Electrical Characteristics Symbol TS4B TS4B TS4B TS4B TS4B TS4B TS4B VRRM VRMS VDC I(AV) IFSM VF 01G 50 35 50 02G 100 70 100 03G 200 140 200 04G 400 280 400 4.0 120 05G 600 420 600 06G 07G 800 1000 560 700 800 1000 Units V V V A A 1.0 1.1 5.0 Maximum DC Reverse Current @ TA=25 oC IR at Rated DC Blocking Voltage @ TA=125 oC 500 Typical Thermal Resistance (Note) RθJC 5.5 Operating Temperature Range TJ -55 to +150 Storage Temperature Range TSTG -55 to + 150 Note: Thermal Resistance from Junction to Case with Device Mounted on 2” x 3” x 0.25” Al-Plate Heatsink. V uA uA o C/W o C o C Version: A06 RATINGS AND CHARACTERISTIC CURVES (TS4B01G THRU TS4B07G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE PER BRIDGE ELEMENT 100 5 FIG.2- TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT AVERAGE FORWARD CURRENT. (A) 4 3 INSTANTANEOUS REVERSE CURRENT. ( A) Tj=100 0C 10 2 1 MOUNTED ON 4X4 INCH COPPER PC BOARD 0.5"(12.7mm) LEAD LENGTH 0 50 100 o CASE TEMPERATURE. ( C) 150 0 1 Tj=25 0C 175 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER BRIDGE ELEMENT 0.1 0 8.3ms Single Half Sine Wave JEDEC METHOD 1000 20 40 60 80 100 120 140 PEAK FORWARD SURGE CURRENT. (A) 150 125 100 75 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.4- TYPICAL JUNCTION CAPACITANCE 600 50 25 0 JUNCTION CAPACITANCE.(pF) 500 Tj=25 0C 400 300 200 100 0 0.1 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz 100 FIG.5- TYPICAL FORWARD CHARACTERISTICS PER BRIDGE ELEMENT 0.5 1 2 5 10 20 50 100 200 500 800 40 REVERSE VOLTAGE. (V) INSTANTANEOUS FORWARD CURRENT. (A) 20 10 4 2 1 Tj=125 0C 0.4 0.2 0.1 0.6 8.3ms Single Half Sine Wave 0.7 0.8 0.9 1.0 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE. (V) 1.3 Version: A06
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