TSA1036D

TSA1036D General Purpose Dual PNP Transistor Pin assignment: 6. Collector 1 1. Emitter 1 5. Base 2 2. Base 1 4. Emitter 2 3. Collector 2 BVCEO = - 32V Ic = - 500mA VCE (SAT), = 0.4V(typ.) @Ic / Ib = 300mA / 30mA Features Two TSA1036 chips in a STO-363 package Transistor elements are independent, eliminating interference Optimal for low voltage operation Ordering Information Part No. TSA1036DCU6 Packing 3kpcs / reel Package SOT-363 Marking 1PR Structure Epitaxial planar type. Mounting possible with SOT-323 automatic mounting machines. Complementary to TSC2411DCU6 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (note) Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. 150mW per element must not be exceeded. Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit - 40V - 32V -5 - 0.5 200 (total) +150 - 55 to +150 Unit V V V A mW o o C C Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = - 100uA, IE = 0 IC = - 1mA, IB = 0 IE = - 100uA, IC = 0 VCB = - 20V, IE = 0 VEB = - 4V, IC = 0 IC / IB = - 100mA / - 10mA IC / IB = - 300mA / - 30mA VCE = - 3V, IC = 100mA VCE = - 10V, IC= - 1mA, f=100MHz VCB = - 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 hFE fT Cob Min - 40 - 32 -6 ----120 --- Typ ------- 0.40 -180 2 Max ---- 0.5 - 0.5 - 0.4 - 0.75 390 --- Unit V V V uA uA V V MHz pF Note : pulse test: pulse width