TSA1765
High Voltage PNP Epitaxial Planar Transistor
SOT-223
Pin Definition: 1. Base 2. Collector 3. Emitter
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT) -600V -560V -150mA -0.5V @ IC / IB = -50mA / -10mA
Features
● ● Low Saturation Voltages High Breakdown Voltage
Ordering Information
Part No.
TSA1765CW RP
Package
SOT-223
Packing
2.5Kpcs / 13” Reel
Structure
● ● Epitaxial Planar Type PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Total Power Dissipation @ TC=25ºC Operating Junction Temperature Operating Junction and Storage Temperature Range
Symbol
VCBO VCEO VEBO IC ICP IB Ptot TJ TSTG
Limit
-600 -560 -7 -150 -500 -50 2 +150 - 55 to +150
Unit
V V V mA W
o o
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance
Conditions
IC = -1mA, IE = 0 IC = -1mA, IB = 0 IE = -10uA, IC = 0 VCB = -600V, IE = 0 VEB = -7V, IC = 0 IC = -20mA, IB = -2mA IC = -50mA, IB = -10mA IC = -50mA, IB = -10mA VCE = -10V, IC = -50mA VCE = -10V, IC = -1mA VCE = -10V, IC = -50mA VCE = -10V, IC = -100mA VCE = -20V, IE=-10mA VCB = -20V, f=1MHz
Symbol
BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) 1 VCE(SAT) 2 VBE(SAT) 1 VBE(ON) hFE 1 hFE 2 hFE 3 fT Cob
Min
-600 -560 -7 ------150 80 -50 --
Typ
-----------15----
Max
----100 -100 -0.2 -0.5 -1.0 -1.0 -300 --8
Unit
V V V nA nA V V V
MHz pF
1/4
Version: B11
TSA1765
High Voltage PNP Epitaxial Planar Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT
Figure 4. Power Derating
Figure 5. Safety Operation Area
2/4
Version: B11
TSA1765
High Voltage PNP Epitaxial Planar Transistor
SOT-223 Mechanical Drawing
DIM A B C D E F G H I J K
SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10° 16° 10° 16° 1.550 1.800 0.061 0.071
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
3/4
Version: B11
TSA1765
High Voltage PNP Epitaxial Planar Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: B11
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