TSA884_10

TSA884 PNP Silicon Planar High Voltage Transistor SOT-23 Pin Definition: 1. Base 2. Emitter 3. Collector PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) -500V -500V -150mA -0.5V @ IC / IB = -50mA / -10mA Features ● ● Low Saturation Voltages Excellent gain characteristics specified up to -50mA Ordering Information Part No. TSA884CX RF Package SOT-23 Packing 3Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Symbol VCBO VCEO VEBO IC PTOT TJ TSTG Limit -500 -500 -5 -150 -500 0.3 +150 - 55 to +150 Unit V V V mA W C o C o Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Turn On Time Turn Off Time Conditions IC = -100uA, IE = 0 IC = -10mA, IB = 0 IE = -100uA, IC = 0 VCB = 120V, IE = 0 VEB = 6V, IC = 0 IC = -20mA, IB = -2mA IC = -50mA, IB = -10mA IC = -50mA, IB = -10mA VCE = -10V, IC = -50mA VCE = -10V, IC = -1mA VCE = -10V, IC = -50mA VCE = -10V, IC = -100mA VCE =10V, IC=-100mA VCB = 20V, f=1MHz VCE = -100V, IC = -50mA IB1=-5mA, IB2=-10mA Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) 1 VCE(SAT) 2 VBE(SAT) VBE(ON) hFE 1 hFE 2 hFE 3 fT Cob Ton Toff Min -500 -500 -5 -----150 80 ------ Typ -----------15 50 -110 1500 Max ----100 -100 -0.2 -0.5 -0.9 -0.9 300 300 --8 --- Unit V V V nA nA V V V MHz pF nS nS 1/4 Version: D08 TSA884 PNP Silicon Planar High Voltage Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating 2/4 Version: D08 TSA884 PNP Silicon Planar High Voltage Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Marking Diagram A8 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 3/4 Version: D08 TSA884 PNP Silicon Planar High Voltage Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: D08