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TSB1132_1

TSB1132_1

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSB1132_1 - Low Vcesat PNP Transistor - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
TSB1132_1 数据手册
TSB1132 L o w V c e s a t P N P T r a n s is to r S O T -8 9 P in D e fin itio n : 1. B ase 2 . C o lle c to r 3 . E m itte r PRODUCT SUMMARY B V CBO B V CEO IC V C E (S A T ) -4 0 V -3 2 V -1 A -0 .1 5 V @ IC / IB = -0 .5 A / -5 0 m A Features ● ● L o w V C E (S A T ) - 0 . 1 5 @ I C / I B = - - . 5 A / - 5 0 m A ( T y p . ) E x c e lle n t D C c u r r e n t g a in c h a r a c te r is tic s Ordering Information P a rt N o . TSB1132CY RM Package S O T -8 9 P a c k in g 1K pcs / 7” R eel Structure ● ● E p ita x ia l P la n a r T y p e P N P S ilic o n T r a n s is to r Absolute Maximum Rating (Ta = 25oC unless otherwise noted) P a ra m e te r C o lle c to r - B a s e V o lta g e C o lle c to r - E m itte r V o lta g e E m itte r - B a s e V o lta g e C o lle c to r C u r r e n t C o lle c to r P o w e r D is s ip a tio n O p e r a tin g J u n c tio n T e m p e r a tu r e O p e r a tin g J u n c tio n a n d S to r a g e T e m p e r a tu r e R a n g e N o te : 1 . S in g le p u ls e , P w = 1 0 m s , D u ty ≤ 5 0 % 2 . W h e n m o u n te d o n a 4 0 x 4 0 x 0 .7 m m c e r a m ic b o a r d . DC P u ls e Sym bol V CBO V CEO V EBO IC PD TJ T STG L im it -4 0 -3 2 -5 -1 -2 .5 (n o te 1 ) 0 .6 2 (n o te 2 ) +150 - 5 5 to + 1 5 0 U n it V V V A W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) P a ra m e te r C o lle c to r - B a s e B r e a k d o w n V o lta g e C o lle c to r - E m itte r B r e a k d o w n V o lta g e E m itte r - B a s e B r e a k d o w n V o lta g e C o lle c to r C u to ff C u r r e n t E m itte r C u to ff C u r r e n t C o lle c to r - E m itte r S a tu r a tio n V o lta g e D C C u r r e n t T r a n s fe r R a tio T r a n s itio n F r e q u e n c y O u tp u t C a p a c ita n c e h FE v a lu e s a r e c la s s ifie d a s fo llo w s : Rank Q R h FE 120~270 180~390 C o n d itio n s IC = -5 0 u A , IE = 0 IC = -1 m A , IB = 0 IE = -5 0 u A , IC = 0 V CB = - 2 0 V , I E = 0 V EB = - 4 V , I C = 0 IC / IB = -0 .5 A / -5 0 m A V CE = - 3 V , I C = 1 0 0 m A V CE = - 5 V , I C= - 5 0 m A , f= 1 0 0 M H z V CB = - 1 0 V , f = 1 M H z Sym bol B V CBO B V CEO B V EBO I CBO I EBO V C E (S A T ) h FE fT Cob M in -4 0 -3 2 -5 ---82 --- Typ ------0 .1 5 -150 20 M ax ----0 .5 -0 .5 -0 .5 390 -30 U n it V V V uA uA V MHz pF 1 /1 V e r s io n : A 0 8 TSB1132 L o w V c e s a t P N P T r a n s is to r Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) F ig u r e 1 . D C C u r r e n t G a in F i g u r e 2 . V C E (S A T ) v . s . I c F i g u r e 3 . V B E (S A T ) v . s . I c F ig u r e 4 . P o w e r D e r a tin g C u r v e 2 /2 V e r s io n : A 0 8 TSB1132 L o w V c e s a t P N P T r a n s is to r S O T -8 9 M e c h a n ic a l D r a w in g D IM A B C D E F G H I J S O T -8 9 D IM E N S IO N M IL L IM E T E R S IN C H E S M IN MAX M IN MAX 4 .4 0 4 .6 0 0 .1 7 3 0 .1 8 1 1 .5 0 1 .7 0 .0 5 9 0 .0 7 0 2 .3 0 2 .6 0 0 .0 9 0 0 .1 0 2 0 .4 0 0 .5 2 0 .0 1 6 0 .0 2 0 1 .5 0 1 .5 0 0 .0 5 9 0 .0 5 9 3 .0 0 3 .0 0 0 .1 1 8 0 .1 1 8 0 .8 9 1 .2 0 0 .0 3 5 0 .0 4 7 4 .0 5 4 .2 5 0 .1 5 9 0 .1 6 7 1 .4 1 .6 0 .0 5 5 0 .0 6 8 0 .3 5 0 .4 4 0 .0 1 4 0 .0 1 7 3 /3 V e r s io n : A 0 8 TSB1132 L o w V c e s a t P N P T r a n s is to r N o t ic e S p e c if ic a t io n s o f t h e p r o d u c t s d is p la y e d h e r e in a r e s u b je c t t o c h a n g e w it h o u t n o t ic e . T S C o r a n y o n e o n it s b e h a lf , a s s u m e s n o r e s p o n s ib ility o r lia b ility fo r a n y e r r o r s o r in a c c u r a c ie s . In fo r m a tio n c o n ta in e d h e r e in is in te n d e d to p r o v id e a p r o d u c t d e s c r ip tio n o n ly . N o lic e n s e , e x p r e s s o r im p lie d , to a n y in te lle c tu a l p r o p e r ty r ig h ts is g r a n te d b y th is d o c u m e n t. E x c e p t a s p r o v id e d in T S C ’s te r m s a n d c o n d itio n s o f s a le fo r s u c h p r o d u c ts , T S C a s s u m e s n o lia b ility w h a ts o e v e r , a n d d is c la im s a n y e x p r e s s o r im p lie d w a r r a n ty , r e la tin g to s a le a n d /o r u s e o f T S C p r o d u c ts in c lu d in g lia b ility o r w a r r a n tie s r e la tin g to fitn e s s fo r a p a r tic u la r p u r p o s e , m e r c h a n ta b ility , o r in fr in g e m e n t o f a n y p a te n t, c o p y r ig h t, o r o th e r in te lle c tu a l p r o p e r ty r ig h t. T h e p r o d u c ts s h o w n h e r e in a r e n o t d e s ig n e d fo r u s e in m e d ic a l, life - s a v in g , o r life - s u s ta in in g a p p lic a tio n s . C u s to m e r s u s in g o r s e llin g th e s e p r o d u c ts fo r u s e in s u c h a p p lic a tio n s d o s o a t th e ir o w n r is k a n d a g r e e to fu lly in d e m n ify T S C fo r a n y d a m a g e s r e s u ltin g fr o m s u c h im p r o p e r u s e o r s a le . 4 /4 V e r s io n : A 0 8
TSB1132_1 价格&库存

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