TSB1184CPR

TSB1184 Low Vce(sat) PNP Transistor Pin Assignment: 1. Base 2. Collector 3. Emitter BVCEO = - 50V Ic = - 3A VCE (SAT), = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB1184CP Packing Tape & Reel Package TO-252 Structure Epitaxial planar type. PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2mS DC Pulse TO-252 PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit - 50V - 50V -6 -3 - 7 (note 1) 1.0 +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = - 50uA, IE = 0 IC = - 1mA, IB = 0 IE = - 50uA, IC = 0 VCB = - 40V, IE = 0 VEB = - 4V, IC = 0 IC / IB = - 2.0A / - 0.2A VCE = - 2V, IC = - 1A VCE = - 5V, IC = - 100mA, f = 100MHz VCB = - 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob Min - 50 - 50 -6 ---120 -- Typ ------ 0.3 -80 55 Max ----1 -1 - 0.5 560 --- Unit V V V uA uA V MHz pF Note : pulse test: pulse width