TSB1386CY

TSB1386 Low Frequency PNP Transistor BVCEO = - 20V Ic = - 5A VCE (SAT), = - 0.35V(typ.) @Ic / Ib = - 4A / - 0.1A Pin assignment: 1. Base 2. Collector 3. Emitter Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB1386CP TSB1386CY Packing Tape & Reel Package TO-252 SOT-89 Structure Epitaxial planar type. PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 10mS, Duty