TSB1412CP

T SB1 4 1 2 Low Vcesat PNP Transistor TO-252 (DPAK) Pin Definition: 1 . Ba s e 2. Collecto r 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) - 40V - 30V - 5A -0.5V @ IC / IB = -4A / -100mA Features ● ● Low VCE(SAT) -0.36 @ IC / IB = -4A / -100mA (Typ.) Complementary part with TSD2118 Ordering Information Part No. TSB1412C P R O Package TO-252 Packi ng 2.5Kpcs / 13” Reel Structure ● ● Epitaxial Planar Type PN P Silicon Transis tor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw=10ms DC Pulse Ta=25ºC Tc=25ºC Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit - 40 - 30 -6 -5 -10 (note) 1 10 +1 5 0 - 55 to +150 Unit V V V A W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage DC Current Transfer Ratio Conditi ons IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -25V, IE = 0 VEB = -5V, IC = 0 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT C ob Mi n - 40 - 30 -6 ---180 --- Ty p ------0.36 -120 60 Max ----0.5 -0.5 -0.5 390 --- Unit V V V uA uA V IC / IB = -4A / -100mA VCE = -2V, IC = -500mA VCE =-6V, IC=-50mA, Transition Frequency f=30MHz Output Capacitance VCB = -20V, f=1MHz * Pulse Tes t: Pulse Width ≤380uS, Duty Cycle≤2% MHz pF 1/ 4 Version: A07 T SB1 4 1 2 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derat ing C urve 2/ 4 Version: A07 T SB1 4 1 2 Low Vcesat PNP Transistor TO-252 Mechanical Drawing TO-252 DIMENS ION DIM A A1 B C D E F G G1 G2 H I J K L M MILLIMETERS MIN MA X 2.3BSC 4.6BSC 6.80 5.40 6.40 2.20 0.00 5.20 0.75 0.55 0.35 0.90 2.20 0.50 0.90 1.30 7.20 5.60 6.65 2.40 0.20 5.40 0.85 0.65 0.65 1.50 2.80 1.10 1.50 1.70 INCHES MIN MA X 0.09BSC 0.18BSC 0.268 0.213 0.252 0.087 0.000 0.205 0.030 0.022 0.014 0.035 0.087 0.020 0.035 0.051 0.283 0.220 0.262 0.094 0.008 0.213 0.033 0.026 0.026 0.059 0.110 0.043 0.059 0.67 3/ 4 Version: A07 T SB1 4 1 2 Low Vcesat PNP Transistor Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/ 4 Version: A07