TSB1424_07

T SB1 4 2 4 Low Vcesat PNP Transistor SOT-89 Pin Definition: 1 . Ba s e 2. Collecto r 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) - 20V - 20V - 3A -0.2V @ IC / IB = -2A / -100mA Features ● ● Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150 Ordering Information Part No. TSB1424C Y R M Package SOT-89 Packi ng 1Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type PN P Silicon Transis tor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=10ms , D uty≤50% 2. W hen mounted on a 40 x 50 x 0.7mm cer amic board. DC Pulse Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit - 20 - 20 -6 -3 - 5 ( not e1) 0.6 2 (note 2) +1 5 0 - 55 to +150 Unit V V V A W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance hFE values are classified as follows : R ank Q R hFE 1 2 0 ~2 7 0 1 8 0 ~3 9 0 Conditi ons IC = -50uA, IE = 0 IC = -10mA, IB = 0 IE = -50uA, IC = 0 VCB = -20V, IE = 0 VEB = -5V, IC = 0 IC / IB = -2A / -100mA VCE = -2V, IC = 100mA VCE =-2V, IE=0.5A, f=100MHz VCB = -10V, IE = 0, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT C ob Mi n - 20 - 20 -6 ---120 --- Ty p ------0.2 -200 28 Max ----0.1 -0.1 -0.5 390 --- Unit V V V uA uA V MHz pF 1/ 4 Version: A07 T SB1 4 2 4 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Transit ion Frequency v.s. IE Figure 5. C ollect or Output C apacitance vs. Vcb Figure 6. C ollect or Input Capacitance vs. Veb 2/ 4 Version: A07 T SB1 4 2 4 Low Vcesat PNP Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J SOT-89 DIMENSION MILLIMETER S INCH ES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 3/ 4 Version: A07 T SB1 4 2 4 Low Vcesat PNP Transistor Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/ 4 Version: A07