TSB1590_1

TSB1590 Low Vcesat PNP Transistor SOT-23 Pin Definition: 1. Base 2. Emitter 3. Collector PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) -40V -25V -1 A -0.18V @ IC / IB = -500mA / -50mA Features ● ● Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA Complementary part with TSD2444 Ordering Information Part No. TSB1590CX RF Package SOT-23 Packing 3Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% Symbol VCBO VCEO VEBO IC PD RθJA TJ TSTG Limit -40 -25 -6 -1 225 556 +150 - 55 to +150 Unit V V V A mW o C/W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Conditions IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -35V, IE = 0 VEB = -6V, IC = 0 IC / IB = -500mA / -50mA IC / IB = -500mA / -50mA VCE = -3V, IC = -100mA VCE = -3V, IC = -800mA VCE =-5V, IC=-50mA, f=100MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VBE(SAT) *hFE 1 *hFE 2 fT Cob Min -4 0 -25 -6 ----120 80 --- Typ ------0.18 -0.9 --150 15 Max ----100 -100 -0.4 -1.3 560 ---- Unit V V V nA nA V V MHz pF Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/1 Version: A09 TSB1590 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Cutoff Frequency vs. Ic Figure 5. Power Derating Curve 2/2 Version: A09 TSB1590 Low Vcesat PNP Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º 3/3 Version: A09 TSB1590 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A09