TSB772CK

TSB772CK

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSB772CK - Low Vce(sat) PNP Transistor - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSB772CK 数据手册
TSB772 Low Vce(sat) PNP Transistor TO-126 Pin assignment: TO-126 1. Emitter 2. Collector 3. Base BVCEO = - 50V Ic = - 3A VCE (SAT), = - 0.5V(typ.) @Ic / Ib = - 2A / - 0.1A Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB772CK Packing Bulk Pack Package TO-126 Structure Epitaxial planar type. PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2mS DC Pulse TO-126 PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit - 50V - 50V -6 -3 - 7 (note 1) 1.0 +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = - 50uA, IE = 0 IC = - 1mA, IB = 0 IE = - 50uA, IC = 0 VCB = - 40V, IE = 0 VEB = - 4V, IC = 0 IC / IB = - 2.0A / - 0.2A VCE = - 2V, IC = - 1A VCE = - 5V, IC = - 100mA, f = 100MHz VCB = - 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob Min - 50 - 50 -6 ---160 -- Typ ------ 0.3 -80 55 Max ----1 -1 - 0.5 350 --- Unit V V V uA uA V MHz pF Note : pulse test: pulse width
TSB772CK
1. 物料型号: - 型号:TSB772 - 封装:TO-126

2. 器件简介: - TSB772是一款PNP晶体管,具有低Vce(sat)特性和优秀的直流电流增益特性。

3. 引脚分配: - 1. 集电极(Collector) - 2. 发射极(Emitter) - 3. 基极(Base)

4. 参数特性: - 集电极-基极电压(Vcbo):-50V - 集电极-发射极电压(Vceo):-50V - 发射极-基极电压(Vebo):-6V - 集电极电流(Ic):-3A(直流),-7A(脉冲) - 集电极功耗(Pc):1.0W(TO-126封装) - 工作结温(Tj):+150°C - 存储和工作温度范围(Tstg):-55°C至+150°C

5. 功能详解: - 该晶体管在饱和状态下具有低Vce特性,适用于需要低功耗和高效率的应用场合。 - 直流电流增益特性优秀,适用于信号放大。

6. 应用信息: - 适用于音频放大、电源控制、开关应用等。

7. 封装信息: - 封装类型:TO-126 - 机械尺寸和电气特性曲线已在文档中提供。
TSB772CK 价格&库存

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