TSB772CKB0G

TSB772 Low Vcesat PNP Transistor TO-126 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) -50V -30V -3A -0.5V @ IC / IB = -2A / -200mA Features ● ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882 Ordering Information Part No. TSB772CK B0 TSB772CK B0G Package TO-126 TO-126 Packing 250pcs / Bulk 250pcs / Bulk Structure ● ● Epitaxial Planar Type PNP Silicon Transistor Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation DC Pulse o Ta = 25 C o Tc = 25 C Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit -50 -30 -5 -3 -7 (note) 1 10 +150 - 55 to +150 Unit V V V A W o o Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Conditions IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -30V, IE = 0 VEB = 3V, IC = 0 IC / IB = -2A / -200mA IC / IB = -2A / -200mA VCE = -2V, IC = -1A VCE =-5V, IC=-100mA, f=100MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VBE(SAT) *hFE fT Cob Min -50 -30 -5 ----100 --- Typ ------0.3 -1 -80 55 Max ----1 -1 -0.5 -2 500 --- Unit V V V uA uA V V MHz pF Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: E11 TSB772 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: E11 TSB772 Low Vcesat PNP Transistor TO-126 Mechanical Drawing DIM ∝1 ∝2 ∝3 ∝4 A B C D E F G H I J K L M TO-126 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 3ºC -3ºC -3ºC 3ºC --3ºC 3ºC --3ºC 3ºC --3.81 3.91 0.150 0.153 6.99 7.09 0.275 0.279 13.50 15.50 0.531 0.610 7.52 7.72 0.285 0.303 0.95 1.05 0.034 0.041 0.71 0.81 0.028 0.031 1.22 1.32 0.048 0.052 4.34 4.80 0.170 0.189 2.41 2.66 0.095 0.105 1.14 1.39 0.045 0.055 1.14 1.39 0.045 0.055 -0.55 -0.021 3.50 3.86 0.137 0.152 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 3/4 Version: E11 TSB772 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: E11