TSB772S
Low Vcesat PNP Transistor
TO-92
Pin Definition: 1. Emitter 2. Collector 3. Base
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT) -50V -30V -3A -0.5V @ IC / IB = -2A / -200mA
Features
● ● Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882S
Ordering Information
Part No. Package Packing
1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo
Structure
● ● Epitaxial Planar Type PNP Silicon Transistor
TSB772SCT B0 TO-92 TSB772SCT B0G TO-92 TSB772SCT A3 TO-92 TSB772SCT A3G TO-92 Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% DC Pulse
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Limit
-50 -30 -5 -3 -7 (note) 0.625 +150 - 55 to +150
Unit
V V V A W
o o
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency
Conditions
IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -30V, IE = 0 VEB = 3V, IC = 0 IC / IB = -2A / -200mA IC / IB = -2A / -200mA VCE = -2V, IC = -1A VCE =-5V, IC=-100mA, f=100MHz
Symbol
BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VBE(SAT) *hFE fT Cob
Min
-50 -30 -5 ----100 ---
Typ
------0.3 -1 -80 55
Max
----1 -1 -0.5 -2 500 ---
Unit
V V V uA uA V V
MHz pF
Output Capacitance VCB = -10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
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Version: F07
TSB772S
Low Vcesat PNP Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Power Derating Curve
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Version: F07
TSB772S
Low Vcesat PNP Transistor
TO-92 Mechanical Drawing
DIM A B C D E F G H
TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
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Version: F07
TSB772S
Low Vcesat PNP Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: F07
