TSB772_07

T SB7 7 2 Low Vcesat PNP Transistor TO-126 Pin Definition: 1. Emitter 2. Collecto r 3 . Ba s e PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) - 50V - 50V - 3A -0.5V @ IC / IB = -2A / -200mA Features ● ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882 Ordering Information Part No. TSD772C K B0 Package TO-126 Packi ng 1Kpcs / Bulk Structure ● ● Epitaxial Planar Type PN P Silicon Transis tor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% DC Pulse o Ta = 25 C Tc = 25 C o Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit - 50 - 50 -5 -3 - 7 ( not e) 1 10 +1 5 0 - 55 to +150 Unit V V V A W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage Base- Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Conditi ons IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -30V, IE = 0 VEB = 3V, IC = 0 IC / IB = -2A / -200mA IC / IB = -2A / -200mA VCE = -2V, IC = -1A VCE =-5V, IC=-100mA, f=100MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VBE(SAT) *hFE fT C ob Mi n - 50 - 50 -5 ----100 --- Ty p ------0.3 -1 -80 55 Max ----1 -1 -0.5 -2 500 --- Unit V V V uA uA V V MHz pF Output Capacitance VCB = -10V, f=1MHz * Pulse Tes t: Pulse Width ≤380uS, Duty Cycle≤2% 1/ 4 Version: A07 T SB7 7 2 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derat ing C urve 2/ 4 Version: A07 T SB7 7 2 Low Vcesat PNP Transistor TO-126 Mechanical Drawing DIM ∝1 ∝2 ∝3 ∝4 A B C D E F G H I J K L M TO-126 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 3 ºC -3 ºC -3 ºC 3 ºC --3 ºC 3 ºC --3 ºC 3 ºC --0.150 0.153 3.81 3.91 0.275 0.279 6.99 7.09 0.531 0.610 13.50 15.50 0.285 0.303 7.52 7.72 0.034 0.041 0.95 1.05 0.028 0.031 0.71 0.81 0.048 0.052 1.22 1.32 0.170 0.189 4.34 4.80 0.095 0.105 2.41 2.66 0.045 0.055 1.14 1.39 0.045 0.055 1.14 1.39 -0.021 -0.55 0.137 0.152 3.50 3.86 3/ 4 Version: A07 T SB7 7 2 Low Vcesat PNP Transistor Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/ 4 Version: A07