TSC2059

TSC2059

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSC2059 - General Purpose NPN Transistor - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSC2059 数据手册
TSC2059 General Purpose NPN Transistor Pin assignment: 1. Base 2. Emitter 3. Collector BVCEO = 40V Ic = 50mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA Features High transition frequency Very low capacitance Small rbb’-Cc and high gain Small NF. Ordering Information Part No. TSC2059CX Packing Package Marking 3E 3kpcs / Reel SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 18V 25V 3 50 225 +150 - 55 to +150 Unit V V V mA mW o o C C Electrical Characteristics Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance IC = 10uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC / IB = 20mA / 4mA VCE = 10V, IC = 10mA VCE = 10V, IC= 10mA, f=200MHz VCB = 10V, f=1MHz VCB = 10V, IC= 10mA, f=31.8MHz VCE = 12V, IC= 2mA, f=200MHz, Rg=50ohm NF -5.5 -dB Cob Rbb’-Cc --1.4 8 2.0 15 pF pF BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 hFE fT 25 18 3 ---52 --------1000 ---0.5 0.5 0.5 270 -MHz V V V uA uA V Conditions Symbol Min Typ Max Unit Note : pulse test: pulse width
TSC2059
物料型号: - 型号:TSC2059 - 封装:SOT-23 - 包装:3kpcs/Reel - 标记:3E

器件简介: - TSC2059是一款通用目的的NPN晶体管,具有高转换频率、极低电容、小rbb'-Cc和高增益、小NF等特点。

引脚分配: - 1. Base(基极) - 2. Emitter(发射极) - 3. Collector(集电极)

参数特性: - VCEO(集电极-发射极电压):25V - VEBO(发射极-基极电压):3V - IC(集电极电流):50mA - Pd(耗散功率):225mW - Tj(工作结温):+150℃ - TSTG(存储温度范围):-55 to +150℃ - BVCBO(集电极-基极击穿电压):25V - BVCEO(集电极-发射极击穿电压):18V - BVEBO(发射极-基极击穿电压):3V - ICBO(集电极截止电流):0.5uA - IEBO(发射极截止电流):0.5uA - VCE(SAT)(饱和电压):0.5V - hFE(电流增益):52-270 - fr(转换频率):1000MHz - Cob(输出电容):1.4-2.0pF - Rbb'-Cc(内部电容):8-15pF - NF(噪声系数):5.5dB

功能详解: - TSC2059晶体管具有高转换频率和低电容特性,适合用于高频应用。同时,它还具有较小的rbb'-Cc和高增益,以及较小的噪声系数,使其适用于低噪声放大器设计。

应用信息: - 由于其高转换频率和低噪声特性,TSC2059适用于高频和低噪声放大器应用。

封装信息: - 封装类型:SOT-23 - 机械尺寸图已提供,详细列出了SOT-23封装的各个尺寸参数。
TSC2059 价格&库存

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