TSC2411CXRF

TSC2411 General Purpose NPN Transistor SOT-23 Pin Definition: 1. Base 2. Emitter 3. Collector PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 40V 75V 600mA 0.5V @ IC / IB = 380mA / 10mA Features ● ● Driver Stage of AF Amplifier General Purpose Switching Application Ordering Information Part No. TSC2411CX RF Package SOT-23 Packing 3Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type Complementary to TSA1036CX Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=20ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 75 40 6 600 225 +150 - 55 to +150 Unit V V V mA mW o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 10uA, IE = 0 IC = 10mA, IB = 0 IE = 10uA, IC = 0 VCB = 60V, IE = 0 VEB = 3V, IC = 0 IC / IB = 380mA / 10mA IC / IB = 150mA / 15mA IC / IB = 500mA / 50mA IC / IB = 150mA / 15mA IC / IB = 500mA / 50mA VCE = 1V, IC = 150mA VCE =5V, IC=-20mA, f=100MHz VCB = 5V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) 1 VCE(SAT) 2 VCE(SAT) 3 VBE(SAT) 1 VBE(SAT) 2 hFE fT Cob Min 75 40 6 -----0.75 -82 300 -- Typ -----0.2 0.2 0.45 ----6 Max ---0.1 0.1 0 .5 0 .4 0.75 0.95 1.2 390 --- Unit V V V uA uA V V V V V MHz pF 1/4 Version: A09 TSC2411 General Purpose NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Cutoff Frequency vs. Ic Figure 5. Power Derating Curve 2/4 Version: A09 TSC2411 General Purpose NPN Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º 3/4 Version: A09 TSC2411 General Purpose NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A09