TSC2411D

TSC2411D General Purpose Dual NPN Transistor Pin assignment: 6. Collector 1 1. Emitter 1 5. Base 2 2. Base 1 4. Emitter 2 3. Collector 2 BVCEO = 40V Ic = 600mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA Features Two TSC2411 chips in a STO-363 package Transistor elements are independent, eliminating interference Optimal for low voltage operation Ordering Information Part No. TSC2411DCU6 Packing 3kpcs / reel Package SOT-363 Marking 1PR Structure Epitaxial planar type. Mounting possible with SOT-323 automatic mounting machines. Complementary to TSA1036DCU6 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (note) Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. 150mW per element must not be exceeded. Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 60V 40V 6 0.6 200 (total) +150 - 55 to +150 Unit V V V A mW o o C C Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage DC Current Transfer Ratio Conditions IC = 100uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCE = 35V, VEB = 0.4V IC / IB = 150mA / 15mA IC / IB = 500mA / 50mA VCE = 1V, IC = 100uA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE = 2V, IC = 500mA Symbol BVCBO BVCEO BVEBO ICE VCE(SAT)1 VCE(SAT)2 hFE 1 hFE 2 hFE 3 hFE 4 hFE 5 fT Cob Min 60 40 6 ---20 40 80 82 40 --- Typ -----0.20 -----250 6 Max ---0.1 0.4 0.75 ---390 ---- Unit V V V uA V V Transition Frequency Output Capacitance VCE =5V, IC=20mA, f=100MHz VCB = 5V, f=1MHz MHz pF Note : pulse test: pulse width