TSC4505CXRF

T SC4 5 0 5 High Voltage NPN Transistor SOT-23 Pin Definition: 1 . Ba s e 2. Emitter 3. Collecto r TO-92 Pin Definition: 1. Emitter 2 . Ba s e 3. Collecto r PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 400V 300m A 0.1V @ IC / IB = 10mA / 1mA Features ● ● Low VCE(SAT) 0.15V @ IC / IB = 10mA / 10mA (Typ.) Complementary part with TSA1759 Ordering Information Part No. TSC4505C X RF TSC4505C T B0 TSC4505C T A3 Package SOT-23 TO-92 TO-92 Packi ng 3Kpcs / 7” Reel 1Kpcs / Bulk 2Kpcs / Ammo Structure ● ● Epitaxial Planar Type NPN Silicon Trans istor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=20ms , D uty≤50% SOT-23 TO-92 Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 400 400 6 300 0.225 0.6 +1 5 0 - 55 to +150 Unit V V V mA W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Reverse Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage Base- Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditi ons IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 400V, IE = 0 VCE = 300V, REB = 4k Ω VEB = 6V, IC = 0 IC / IB = 10mA / 1mA IC / IB = 10mA / 1mA VCE = 10V, IC = 10mA VCE =10V, IC=-10mA, f=10MHz VCB = 10V, IE = 0, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO VCE(SAT) VBE(SAT) hFE fT C ob Mi n 400 400 6 -----100 --- Ty p ------0.1 --20 7 Max ---10 20 10 0.5 1.5 270 --- Unit V V V uA nA uA V V MHz pF 1/ 5 Version: A07 T SC4 5 0 5 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derat ing C urve 2/ 5 Version: A07 T SC4 5 0 5 High Voltage NPN Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETER S INCH ES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º 3/ 5 Version: A07 T SC4 5 0 5 High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30( typ) 0.563( typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 4/ 5 Version: A07 T SC4 5 0 5 High Voltage NPN Transistor Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/ 5 Version: A07