TSC4505_11

TSC4505 High Voltage NPN Transistor SOT-23 Pin Definition: 1. Base 2. Emitter 3. Collector PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 400V 300mA 0.1V @ IC / IB = 10mA / 1mA Features ● ● Low VCE(SAT) 0.15V @ IC / IB = 10mA / 10mA (Typ.) Complementary part with TSA1759 Ordering Information Part No. TSC4505CX RF TSC4505CX RFG Package SOT-23 SOT-23 Packing 3Kpcs / 7” Reel 3Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type NPN Silicon Transistor Note: “G” denotes Halogen Free Product. Absolute Maximum Rating (TA = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation SOT-23 Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw=20ms, Duty≤50% Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 400 400 6 300 0.225 +150 - 55 to +150 Unit V V V mA W o o C C Electrical Specifications (TA = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Reverse Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 400V, IE = 0 VCE = 300V, REB = 4kΩ VEB = 6V, IC = 0 IC / IB = 10mA / 1mA IC / IB = 10mA / 1mA VCE = 10V, IC = 10mA VCE =10V, IC=-10mA, f=10MHz VCB = 10V, IE = 0, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO VCE(SAT) VBE(SAT) hFE fT Cob Min 400 400 6 -----100 --- Typ ------0.1 --20 7 Max ---10 20 10 0.5 1.5 270 --- Unit V V V uA nA uA V V MHz pF 1/4 Version: B11 TSC4505 High Voltage NPN Transistor Electrical Characteristics Curve (TA = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: B11 TSC4505 High Voltage NPN Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 1.00 BSC 0.039 BSC 2.00 BSC 0.079 BSC 2.10 2.75 0.083 0.108 0.063 1.20 1.60 0.047 2.80 3.04 0.110 0.120 0.051 0.89 1.30 0.035 0.01 0.10 0.000 0.004 0.020 0.30 0.50 0.012 0.007 0.08 0.18 0.003 0.024 0.30 0.60 0.012 3/4 Version: B11 TSC4505 High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: B11