Preliminary
TSC5304D
High Voltage NPN Transistor with Diode
Pin assignment: 1. Base 2. Collector 3. Emitter
BVCEO = 400V BVCBO = 750V Ic = 4A VCE (SAT), = 1.2V @ Ic / Ib = 4A / 1A
Features
Built-in free-wheeling diode makes efficient anti saturation operation. No need to interest an hfe value because of low variable storage-time spread even though comer spirit product. Low base drive requirement. Suitable for half bridge light ballast applications.
Ordering Information
Part No. TSC5304DCH TSC5304DCP Packing Tube T&R Package TO-251 TO-252
Block Diagram
Structure
Silicon triple diffused type. NPN silicon transistor with Diode
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Pulse Total Power Dissipation (Tc=25 C) Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note: 1. Single pulse, Pw = 300uS, Duty
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