TSC5401CTA3

Preliminary TSC5401 Very High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 700V 1500V 1A 1.0V @ IC / IB = 0.5A / 0.1A Features ● ● Very High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TSC5401CT B0 TSC5401CT B0G TSC5401CT A3 TSC5401CT A3G Package TO-92 TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo Note: “G” denote for Green Product Absolute Maximum Rating (Ta = 25ºC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, Duty ≤2% DC Pulse DC Pulse Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Limit 1500V 700V 7 1 2 0.5 1 10 +150 - 55 to +150 Unit V V V A A W ºC ºC 1 /4 Version: Preliminary Preliminary TSC5401 Very High Voltage NPN Transistor Electrical Specifications (Ta = 25ºC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Dynamic Resistive Load Switching Time (Ratings) Rise Time Storage Time Fall Time VCC =400V, IC =0.5A, IB1=0.1, IB2=-0.2A, tP =25uS tr tSTG tf --0.4 1.5 0.25 0.8 3 0 .4 uS uS uS IC =1mA, IB =0 IC =5mA, IE =0 IE =1mA, IC =0 VCE =700V, IB=0 VCB =1300V, IE =0 VEB = 7V, IC =0 IC=0.2A, IB =0.04A IC=0.5A, IB =0.1A IC=0.5A, IB =0.1A VCE =5V, IC =10mA VCE =5V, IC = 500mA VCE =5V, IC = 1A hFE BVCBO BVCEO BVEBO ICEO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VBE(SAT) 1500 700 7 --------20 5 2 ----------------10 1 10 0 .3 1.0 1.2 45 V V V uA mA uA V V V Conditions Symbol Min Typ Max Unit Note: pulse test: pulse width ≤300uS, duty cycle ≤2% 2 /4 Version: Preliminary Preliminary TSC5401 Very High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 3 /4 Version: Preliminary Preliminary TSC5401 Very High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4 /4 Version: Preliminary