TSC5904

TSC5904 Low Vcesat NPN Transistor SOT-23 Pin Definition: 1. Base 2. Emitter 3. Collector PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 80V 60V 3A 0.60V @ IC / IB = 3 / 300mA Features ● ● High Collector-Emitter BVCEO=60V High Collector Current IC =3A Ordering Information Part No. TSC5904CX RF Package SOT-23 Packing 3Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot TJ TSTG Limit 80 60 5 3 500 +150 - 55 to +150 Unit V V V A mW o C o C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage Conditions IC = 10uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA VCE = 2V, IC = 1A VCE = 2V, IC = 50mA VCE = 2V, IC = 1A VCE = 2V, IC = 3A VCE = 2V, IC = 500mA VCE = 5V, IC=-100mA VCB = 10V, f=1MHz VCC= 10V, IC= 500mA, IB1=-IB2=50mA Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) 1 VCE(SAT) 2 VBE(SAT) VBE(ON) hFE 1 hFE 2 hFE 3 hFE 4 fT Cob Ton Toff Min 80 60 5 -----70 100 80 40 140 ---- Typ -----0.12 0.43 0.9 0.8 -----45 800 Max ---0.1 0.1 0.3 0.6 1.25 1.0 -300 ---30 --- Unit V V V uA uA V V V DC Current Transfer Ratio Transition Frequency Output Capacitance Switching Times MHz pF nS nS 1 /4 Version: A08 TSC5904 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating 2 /4 Version: A08 TSC5904 Low Vcesat NPN Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Marking Diagram CF = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 3 /4 Version: A08 TSC5904 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4 /4 Version: A08