TSC5988CTA3

TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 Pin Definition: 1. Emitter 2. Base 3. Collector PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 150V 60V 6A 0.55V @ IC / IB = 6A / 300mA Features ● Excellent gain characteristics specified up to 10A Ordering Information Part No. TSC5988CT B0 TSC5988CT A3 Structure ● Epitaxial Planar Type Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Symbol VCBO VCEO VEBO IC Ptot TJ TSTG Limit 150 60 6 5 20 1 .0 +150 - 55 to +150 Unit V V V A W C o C o Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Conditions IC =100uA, IE =0 IC =10mA, IB =0 IE =100uA, IC =0 VCB =120V, IE =0 VCB =120V, TA =100ºC VEB =6V, IC =0 IC =100mA, IB =5mA IC =1A, IB =50mA IC =2A, IB =100mA IC =5A, IB =200mA IC =4A, IB =200mA VCE =1V, IC =6A VCE =1V, IC =10mA VCE =1V, IC =2A VCE =1V, IC =5A VCE =1V, IC =10A VCE =10V, IC=100mA VCB =10V, f=1MHz 1/5 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) 1 VCE(SAT) 2 VCE(SAT) 3 VCE(SAT) 4 VBE(SAT) VBE(ON) hFE 1 hFE 2 hFE 3 hFE 4 fT Cob Min 150 60 6 ---------100 120 75 ---- Typ 170 70 8 ---20 80 150 260 920 1.05 -200 140 70 130 72 Max ---50 1 10 50 120 220 -1050 1.2 -300 ----- Unit V V V nA uA nA Collector-Emitter Saturation Voltage mV Base-Emitter Saturation Voltage Base-Emitter on Voltage mV V DC Current Transfer Ratio Transition Frequency Output Capacitance MHz pF Version: C08 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain vs. Collector Current Figure 2. VCE(SAT) vs. Collector Current Figure 3. VBE(SAT) vs. Collector Current Figure 4. fT vs. Emitter Current Figure 5. Cob vs. Collector-Base Voltage Figure 6. Cib vs. Emitter-Base Voltage 2/5 Version: C08 TSC5988 NPN Silicon Planar Medium Power Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 7. Safety Operation Area Figure 8. Derating Curve 3/5 Version: C08 TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.05 0.051 0.37 0.43 0.015 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 4/5 Version: C08 TSC5988 NPN Silicon Planar Medium Power Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: C08