TSD1664_07

T SD1 6 6 4 Low Vcesat NPN Transistor SOT-89 SOT-223 Pin Definition: 1 . Ba s e 2. Collecto r 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 32V 40V 1A 0.15V @ IC / IB = 500mA / 50mA Features ● ● Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.) Complementary part with TSB1132 Ordering Information Part No. TSD1664C Y RM TSD1664CW R P Package TO-92 TO-223 Packi ng 1Kpcs / 7” Reel 2.5Kpcs / 13” Reel Structure ● ● Epitaxial Planar Type NPN Silicon Trans istor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=20ms , D uty≤50% 2. W hen mounted on a 40 x 50 x 0.7mm cer amic board. DC Pulse Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 40 32 5 1 2 (note1) 0.5 2 (note 2) +1 5 0 - 55 to +150 Unit V V V A W o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance hFE values are classified as follows : R ank P Q hFE 8 2 ~1 8 0 1 2 0 ~2 7 0 Conditi ons IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC / IB = 500mA / 50mA VCE = 3V, IC = 100mA VCE =5V, IC=-50mA, f=100MHz VCB = 10V, IE = 0, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT C ob Mi n 40 32 5 ---82 50 -- Ty p -----0.15 -150 10 Max ---0.5 0.5 0.4 390 -20 Unit V V V uA uA V MHz pF R 1 8 0 ~3 9 0 1/ 5 Version: A07 T SD1 6 6 4 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. Transit ion Frequency v.s. IE Figure 4. C ollect or Output C apacitance vs. Vcb 2/ 5 Version: A07 T SD1 6 6 4 Low Vcesat NPN Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J SOT-89 DIMENSION MILLIMETER S INCH ES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 3/ 5 Version: A07 T SD1 6 6 4 Low Vcesat NPN Transistor SOT-223 Mechanical Drawing DIM A B C D E F G H I J K SOT-223 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10 16 10 16 1.550 1.800 0.061 0.071 4/ 5 Version: A07 T SD1 6 6 4 Low Vcesat NPN Transistor Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/ 5 Version: A07