TSD1857CTA3

TSD1857 Low Vcesat NPN Transistor TO-126 TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 180V 180V 1.5A 0.6V @ IC / IB = 1A / 100mA Features ● ● Low VCE(SAT) 0.6 @ IC / IB = 1A / 100mA (Typ.) High BVCEO Ordering Information Part No. TSD1857CT B0 TSD1857CT A3 TSD1857CK B0 Package TO-92 TO-92 TO-126 Packing 1K / Bulk 2K / Ammo 500pcs / Bulk Structure ● ● Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation DC Pulse TO-92 TO-126 Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 180 180 5 1.5 3 (note1) 0.75 1 +150 - 55 to +150 Unit V V V A W o o Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=10ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Conditions Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(ON) hFE 1 hFE 2 fT Cob Min 180 180 5 ---0.45 160 30 --- Typ ---------140 27 Max ---1 1 0.6 0.8 320 ---- Unit V V V uA uA V V IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 160V, IE = 0 VEB = 4V, IC = 0 IC / IB = 1A / 100mA VCE = 5V, IC = 5mA VCE = 5V, IC = 200mA DC Current Transfer Ratio VCE = 5V, IC = 500mA VCE =5V, IE=150A, Transition Frequency f=100MHz Output Capacitance VCB = 10V, f=1MHz Note: Pulse test: pulse width ≤380uS, Duty cycle≤2% MHz pF 1/5 Version: B11 TSD1857 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) vs. Collector Current Figure 3. VBE(SAT) vs. Collector Current Figure 4. Power Derating Curve (TO-92) Figure 5. On Voltage vs. Collector Current Figure 6. Power Derating Curve (TO-126) 2/5 Version: B11 TSD1857 Low Vcesat NPN Transistor TO-126 Mechanical Drawing DIM A A1 b B1 c D E e e1 L L1 P Ø1 Ø2 TO-126 DIMENSION INCHES MILLIMETERS MIN MAX MIN MAX 0.118 0.134 3.00 3.40 0.071 0.087 1.80 2.20 0.026 0.034 0.66 0.86 0.046 0.054 1.17 1.37 0.018 0.024 0.45 0.60 0.307 0.323 7.80 8.20 0.425 0.441 10.80 11.2 0.090 BSC 2.28 BSC 0.176 0.183 4.46 4.66 0.594 0.610 15.10 15.50 0.051 0.059 1.30 1.50 0.159 0.167 4.04 4.24 0.118 0.126 3.00 3.20 0.122 0.130 3.10 3.30 3/5 Version: B11 TSD1857 Low Vcesat NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 4/5 Version: B11 TSD1857 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: B11