TSD2444
Low Vce(sat) NPN Transistor
Pin assignment: 1. Base 2. Emitter 3. Collector
BVCEO = 20V Ic = 1A VCE (SAT), = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA
Features
Low VCE (SAT). Excellent DC current gain characteristics
Ordering Information
Part No. TSD2444CX Packing Tape & Reel Package SOT-23
Structure
Epitaxial planar type. Complementary to TSB1590CX
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 10mS DC Pulse PD TJ TSTG
Symbol
VCBO VCEO VEBO IC
Limit
40V 20V 5 1 1.5 (note 1) 0.225 +150 - 55 to +150
Unit
V V V A W
o o
C C
Electrical Characteristics
Ta = 25 oC unless otherwise noted
Parameter Static
Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance
Conditions
IC = 10uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC / IB = 500mA / 50mA VCE = 2V, IC = 0.1A VCE = 5V, IC = 50mA, f = 100MHz VCB = 10V, f=1MHz
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob
Min
40 20 5 ---82 ---
Typ
-----0.2 -150 15
Max
---0.5 0.5 0.4 390 ---
Unit
V V V uA uA V MHz pF
Note : pulse test: pulse width
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