TSD2444CXP

TSD2444 Low Vce(sat) NPN Transistor Pin assignment: 1. Base 2. Emitter 3. Collector BVCEO = 20V Ic = 1A VCE (SAT), = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSD2444CX Packing Tape & Reel Package SOT-23 Structure Epitaxial planar type. Complementary to TSB1590CX Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 10mS DC Pulse PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit 40V 20V 5 1 1.5 (note 1) 0.225 +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 10uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC / IB = 500mA / 50mA VCE = 2V, IC = 0.1A VCE = 5V, IC = 50mA, f = 100MHz VCB = 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob Min 40 20 5 ---82 --- Typ -----0.2 -150 15 Max ---0.5 0.5 0.4 390 --- Unit V V V uA uA V MHz pF Note : pulse test: pulse width