TSD882
Low Vcesat NPN Transistor
TO-126
Pin Definition: 1. Emitter 2. Collector 3. Base
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT) 50V 50V 3A 0.5V @ IC / IB = 2A / 200mA
Features
● ● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB772
Ordering Information
Part No.
TSD882CK B0 TSD882CK B0G
Package
TO-126 TO-126
Packing
250pcs / Bulk 250pcs / Bulk
Structure
● ● Epitaxial Planar Type NPN Silicon Transistor
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% DC Pulse Ta = 25 C Tc = 25 C
o o
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Limit
50 50 5 3 7 (note) 1 10 +150 - 55 to +150
Unit
V V V A W
o o
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance
Conditions
IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 50V, IE = 0 VEB = 3V, IC = 0 IC / IB = 2A / 200mA IC / IB = 2A / 200mA VCE = 2V, IC = 1A VCE =6V, IC=50mA, f=100MHz VCB = 10V, f=1MHz
Symbol
BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VBE(SAT) *hFE fT Cob
Min
60 50 5 ----100 ---
Typ
-----0.25 --90 45
Max
---1 1 0.5 2 500 ---
Unit
V V V uA uA V V
MHz pF
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
1/4
Version: B11
TSD882
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Power Derating Curve
2/4
Version: B11
TSD882
Low Vcesat NPN Transistor
TO-126 Mechanical Drawing
DIM ∝1 ∝2 ∝3 ∝4 A B C D E F G H I J K L M
TO-126 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 3ºC -3ºC -3ºC 3ºC --3ºC 3ºC --3ºC 3ºC --0.150 0.153 3.81 3.91 0.275 0.279 6.99 7.09 0.531 0.610 13.50 15.50 0.285 0.303 7.52 7.72 0.034 0.041 0.95 1.05 0.028 0.031 0.71 0.81 0.048 0.052 1.22 1.32 0.170 0.189 4.34 4.80 0.095 0.105 2.41 2.66 0.045 0.055 1.14 1.39 0.045 0.055 1.14 1.39 -0.021 -0.55 0.137 0.152 3.50 3.86
3/4
Version: B11
TSD882
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: B11
很抱歉,暂时无法提供与“TSD882CKB0”相匹配的价格&库存,您可以联系我们找货
免费人工找货