TSD882SCY

T SD8 8 2 S Low Vcesat NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collecto r 3 . Ba s e SOT-89 Pin Definition: 1 . Ba s e 2. Collecto r 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 60V 50V 3A 0.5V @ IC / IB = 2A / 200mA Features ● ● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA ( Typ.) Complementary part with TSB772S Ordering Information Part No. TSD882SCT B0 TSD882SCT A3 TSD882SCY R M Package TO-92 TO-92 SOT-89 Packi ng 1Kpcs / Bulk 2Kpcs / Ammo 1Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type NPN Silicon Trans istor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Power Dissipation DC Pulse SOT-89 TO-92 Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 60 50 5 3 7 (note) 0.75 0.625 +1 5 0 - 55 to +150 Unit V V V A W o o Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw≤350us, Duty≤2% C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage Base- Emitter Saturation Voltage DC Current Transfer Ratio Conditi ons IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 50V, IE = 0 VEB = 3V, IC = 0 IC / IB = 2A / 200mA IC / IB = 2A / 200mA Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VBE(SAT) *hFE fT C ob Mi n 60 50 5 ----100 --- Ty p -----0.25 --90 45 Max ---1 1 0.5 2 500 --- Unit V V V uA uA V V VCE = 2V, IC = 1A VCE =6V, IC=50mA, Transition Frequency f=100MHz Output Capacitance VCB = 10V, f=1MHz * Pulse Tes t: Pulse Width ≤380uS, Duty Cycle≤2% MHz pF 1/ 5 Version: A07 T SD8 8 2 S Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derat ing C urve 2/ 5 Version: A07 T SD8 8 2 S Low Vcesat NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30( typ) 0.563( typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 3/ 5 Version: A07 T SD8 8 2 S Low Vcesat NPN Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J SOT-89 DIMENSION MILLIMETER S INCH ES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 4/ 5 Version: A07 T SD8 8 2 S Low Vcesat NPN Transistor Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/ 5 Version: A07