TSD965LCTB0

TSD965L Low Vce(sat) NPN Transistor Pin assignment: 1. Emitter 2. Collector 3. Base BVCEO = 10V Ic = 5A VCE (SAT), = 0.23V(typ.) @Ic / Ib = 3A / 60mA Features Low VCE (SAT). High current capability High allowable power dissipation Ordering Information Part No. TSD965LCT B0 TSD965LCT A3 Packing Bulk Pack Ammo Pack Package TO-92 Structure Epitaxial planar type. Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature DC Pulse PD TJ Symbol VCBO VCEO VEBO IC Limit 15V 10V 7 5 9 (note 1) 0.75 (note 2) +150 Unit V V V A W o o C C Operating Junction and Storage Temperature Range TSTG - 55 to +150 Note: 1. Single pulse, Pw = 350uS, Duty