TSM05N03

Preliminary TSM05N03 30V N-Channel MOSFET SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(m ) 60 @ VGS =10V 30 90 @ VGS =4.5V ID (A) 5 3.8 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM05N03CW RP Package SOT-223 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 30 ±20 5 ±20 1.7 3 Unit V V A A A W 1.1 +150 -55 to +150 o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t ≤ 5 sec. Symbol RӨJC RӨJA Limit 15 45 Unit o o C/W C/W 1/4 Version: Preliminary Preliminary TSM05N03 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V VDS =5V, VGS = 10V VGS = 10V, ID = 5A VGS = 4.5V, ID = 3.8A VDS = 10V, ID = 5A IS = 2.5A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min 30 1 --5 --------------- Typ -----46 70 5 -4.2 1.9 1.35 555 120 60 4.2 19 13 9 Max -3 ±100 1.0 -60 90 -1.2 7 -----5.5 25 17 12 Unit V V nA µA A m S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching b.c VDS = 10V, ID = 5A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, RL = 15 , ID = 1A, VGEN = 10V, nS RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/4 Version: Preliminary Preliminary TSM05N03 30V N-Channel MOSFET SOT-223 Mechanical Drawing DIM A B C D E F G H I J K SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10° 16° 10° 16° 1.550 1.800 0.061 0.071 3/4 Version: Preliminary Preliminary TSM05N03 30V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary