Preliminary
TSM05N03
30V N-Channel MOSFET
SOT-223
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V) RDS(on)(m )
60 @ VGS =10V 30 90 @ VGS =4.5V
ID (A)
5 3.8
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Load Switch PA Switch
Ordering Information
Part No.
TSM05N03CW RP
Package
SOT-223
Packing
2.5Kpcs / 13” Reel N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
30 ±20 5 ±20 1.7 3
Unit
V V A A A W
1.1 +150 -55 to +150
o o
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t ≤ 5 sec.
Symbol
RӨJC RӨJA
Limit
15 45
Unit
o o
C/W C/W
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Version: Preliminary
Preliminary
TSM05N03
30V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V VDS =5V, VGS = 10V VGS = 10V, ID = 5A VGS = 4.5V, ID = 3.8A VDS = 10V, ID = 5A IS = 2.5A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
30 1 --5 ---------------
Typ
-----46 70 5 -4.2 1.9 1.35 555 120 60 4.2 19 13 9
Max
-3 ±100 1.0 -60 90 -1.2 7 -----5.5 25 17 12
Unit
V V nA µA A m S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
b.c
VDS = 10V, ID = 5A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = 10V, RL = 15 , ID = 1A, VGEN = 10V,
nS
RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.
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Version: Preliminary
Preliminary
TSM05N03
30V N-Channel MOSFET
SOT-223 Mechanical Drawing
DIM A B C D E F G H I J K
SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10° 16° 10° 16° 1.550 1.800 0.061 0.071
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Version: Preliminary
Preliminary
TSM05N03
30V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: Preliminary
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