TSM12N65
650V N-Channel Power MOSFET
ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
650
RDS(on)( )
0.8 @ VGS =10V
ID (A)
6
General Description
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
● ● ● ● Low RDS(ON) 0.68 (Typ.) Low gate charge typical @ 41nC (Typ.) Low Crss typical @ 14.6pF (Typ.) Fast Switching
Block Diagram
Ordering Information
Part No.
TSM12N65CI C0
Package
ITO-220
Packing
50pcs / Tube N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 2 Single Pulse Avalanche Energy (Note 1) Avalanche Current (Repetitive) (Note 1) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature
o
Symbol
VDS VGS Tc = 25ºC Tc = 100ºC ID IDM EAS IAS EAR IAR PTOT TJ TSTG
Limit
650 ±30 12 4.5 48 273 12 7.6 12 45 150 -55 to +150
Unit
V V A A A mJ A mJ A W ºC
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC RӨJA
Limit
2.7 62.5
Unit
o o
C/W C/W
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Version: A10
TSM12N65
650V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transfer Conductance Dynamic
b
Conditions
VGS = 0V, ID = 250uA VGS = 10V, ID = 6A VDS = VGS, ID = 250uA VDS = 650V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 10V, ID = 6A
Symbol
BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs Qg Qgs Qgd Ciss Coss Crss td(on)
Min
650 -2.0 ------------------
Typ
-0.68 ---10 41 13 10.5 2162 183 14.6 30 85 140 90 ---510 4.3
Max
-0.8 4.0 1 ±100 -----------12 48 1.4 ---
Unit
V V uA nA S
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 480V, ID = 12A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings and Characteristic Source Current Source Current (Pulse) Diode Forward Voltage Reverse Recovery Time Integral reverse diode in the MOSFET IS = 12A, VGS = 0V VGS = 0V, IS =12A, VGS = 10V, ID = 12A, VDD = 300V, RG =25
tr td(off) tf IS ISM VSD tfr
nS
A A V nS uC
dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=12A, L=3.5mH, RG =25 , Starting TJ=25ºC Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 4: Essentially Independent of Operating Temperature
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Version: A10
TSM12N65
650V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
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Version: A10
TSM12N65
650V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
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Version: A10
TSM12N65
650V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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Version: A10
TSM12N65
650V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
BVDS vs. Junction Temperature Drain Current vs., Case Temperature
Capacitance
Maximum Safe Operating Area
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Version: A10
TSM12N65
650V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
DIM A B C D E F G H I J K L M N O
ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
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Version: A10
TSM12N65
650V N-Channel Power MOSFET
Notice
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Version: A10
