TSM1426

Preliminary TSM1426 30V N-Channel MOSFET SOT-363 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 75 @ VGS = 10V 115 @ VGS = 4.5V ID (A) 3.6 2.9 Features ● ● Advance Trench Process Technology PWM Optimized Block Diagram Application ● ● Boost Converter in Portable devices Low Current Synchronous Rectifier Ordering Information Part No. TSM1424CU6 RF Package SOT-363 Packing 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 30 ±20 3.6 10 1.3 1 .6 0.8 +150 -55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJF RӨJA Limit 45 80 Unit o o C/W C/W 1/4 Version: Preliminary Preliminary TSM1426 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 24V, VGS = 0V VDS ≥ 10V, VGS = 4.5V VGS = 10V, ID = 3.6A VGS = 4.5V, ID = 2.9A VDS = 10V, ID = 3.6A IS = 1.3A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min 30 0.8 --10 --------------- Typ -----61 92 5 0.8 1.9 0.75 0.75 190 100 55 10 12 15 9 Max -2.5 ±100 1.0 -75 115 -1.2 3 -----15 18 22 15 Unit V V nA µA A mΩ S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 15V, ID = 3.6A, VGS = 4.5V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, nS RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/4 Version: Preliminary Preliminary TSM1426 30V N-Channel MOSFET SOT-363 Mechanical Drawing DIM A A1 A2 b b1 c c1 D E E1 e e1 L θ θ1 SOT-363 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.80 1.10 0.031 0.043 0 0.10 0 0.004 0.80 1.00 0.031 0.040 0.15 0.30 0.006 0.012 0.15 0.25 0.006 0.010 0.08 0.22 0.003 0.009 0.08 0.20 0.003 0.008 1.90 2.10 0.074 0.084 2.00 2.20 0.078 0.086 1.15 1.35 0.045 0.055 0.65 BSC 0.025 BSC 1.30 BSC 0.051 BSC 0.26 0.46 0.010 0.018 0º 8º 0º 8º 4º 10º 4º 10º 3/4 Version: Preliminary Preliminary TSM1426 30V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary