TSM1N45

TSM1N45 450V N-Channel Power MOSFET TO-92 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 450 RDS(on)(Ω) 4.25 @ VGS =10V ID (A) 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation mode. There devices are well suited for electronic ballasts base and half bridge configuration. Features ● ● ● ● ● Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±30V guaranteed Block Diagram Ordering Information Part No. TSM1N45CT B0 TSM1N45CT A3 Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Drain to Source Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation @TC =25ºC Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM EAS I AR E AR dv/dt PDTOT TJ, TSTG Limit 450 ±30 0.5 4 108 0.5 0.25 5.5 2 -55 to +150 Unit V V A A mJ A mJ V/ns o W C Thermal Performance Parameter Thermal Resistance - Junction to Lead Thermal Resistance - Junction to Ambient Symbol RӨJL RӨJA Limit 50 140 Unit o o C/W C/W 1/8 Version: A09 TSM1N45 450V N-Channel Power MOSFET Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 0.25A VDS = VGS, ID = 250uA VDS = VGS, ID = 250mA VDS = 450V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 50V, ID = 0.25A Symbol BVDSS RDS(ON) VGS(TH) Min 450 -2.3 3.2 ---- Typ -3 .7 3.0 4.0 --0.7 Max -4.25 3.7 4.8 10 ±100 -- Unit V Ω V Zero Gate Voltage Drain Current IDSS uA Gate Body Leakage IGSS nA Forward Transconductance gfs S Dynamic Total Gate Charge Qg -6.5 10 VDS = 360V, ID = 0.5A, nC VGS = 10V Gate-Source Charge Qgs -1.3 -(Note 4,5) Gate-Drain Charge Qgd -3.2 -Input Capacitance Ciss -235 -VDS = 25V, VGS = 0V, pF Output Capacitance Coss -29 -f = 1.0MHz Reverse Transfer Capacitance Crss -6.5 -Switching Turn-On Delay Time td(on) -14.7 -VGS = 25V, ID = 0.5A, Turn-On Rise Time tr -32.8 -VDS = 225V, RG = 25Ω nS Turn-Off Delay Time td(off) -25.2 -(Note 4,5) Turn-Off Fall Time tf -23.7 -Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS --0.5 A Maximum Pulsed Drain-Source Diode Forward Current I SM --4.0 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 0.5A VSD --1.4 V VGS = 0V, IS = 1A Reverse Recovery Time trr -110 -nS dIF/dt = 100A/µS Reverse Recovery Charge Qrr -0.35 -µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=75mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25ºC 3. ISD ≤ 0.5A, di/dt ≤ 300A/µS, VDD ≤ BVDSS, Starting TJ=25ºC 4. Pulse test: pulse width ≤ 300uS. 5. Essentially independent of operating temperature 6. a) Reference point of the is the drain RӨJL lead b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment (RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RӨCA is determined by the user’s board design) 2/8 Version: A09 TSM1N45 450V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/8 Version: A09 TSM1N45 450V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/8 Version: A09 TSM1N45 450V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 5/8 Version: A09 TSM1N45 450V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 6/8 Version: A09 TSM1N45 450V N-Channel Power MOSFET TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/8 Version: A09 TSM1N45 450V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: A09