TSM1N60LCP

T S M1 N 6 0 L 600V N-Channel Power MOSFET PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source TO-252 TO-251 VDS (V) 600 RDS(on)(Ω) 12 @ VGS =10V ID (A) 1 General Description The TSM1N60L is used an advanced ter mination sc heme to provide enhanced voltage- blocking capability without degrading per for mance over time. In addition, this advanced MOSFET is designed to w iths tand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain- to-source diode w ith a fas t recovery time. Designed for high voltage, high speed switching applications in pow er supplies, converters and PW M motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating ar eas are critical and offer additional and safety margin against unexpected voltage transients. Features ● ● ● ● ● Robust high voltage termination Avalanche energy specified Diode is charac terized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fas t recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No. TSM1N60LC P R O TSM1N60LCH C5 Package TO-252 TO-251 Packi ng 2.5Kpcs / 13” Reel 50pc s / T ube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (D iode Conduc tion) a,b Symbol VDS VGS ID IDM IS EAS PD TJ TJ, TSTG 1/ 7 Limit 600 ± 30 1 4 1 20 2.5 +1 5 0 - 55 t o + 150 Unit V V A A A mJ W o o Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH , RG=25Ω) Maximum Power Dissipation @ Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o C C Version: A07 T S M1 N 6 0 L 600V N-Channel Power MOSFET Thermal Performance Parameter Lead Temperature (1/8” from case) Thermal R esistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol TL R ӨJ A Limit 10 62.5 Unit o S C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditi ons Symbol Mi n 600 -2.0 --------------- Ty p -10.5 ---10 -8.5 1.8 4 210 28 4.2 8 21 18 24 Max -12 4.0 10 ± 100 -1.5 14 ---------- Unit V Ω V uA nA S V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State R esistance VGS = 10V, ID = 0.6A RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS Gate Body Leakage VGS = ±20V, VDS = 0V IGSS Forward Transconduc tance VDS ≧50V, ID = 0.5A gf s Diode Forward Voltage IS = 1A, VGS = 0V VSD b Dynamic Total Gate Charge Qg VDS = 400V, ID = 1A, Gate- Source Charge Qgs VGS = 10V Gate-Drain C harge Qgd Input Capacitance Ciss VDS = 25V, VGS = 0V, Output Capacitance Coss f = 1.0MHz Reverse Trans fer C apacitance Crss c Switching Turn-On Delay Time td(on) Turn-On Rise Time VGS = 10V, ID = 1A, tr VDS = 300V, RG = 6Ω Turn-Off Delay Time td(off) Turn-Off Fall Time tf Notes: a. Pulse test: pulse w idth