TSM1N60LCPRO

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)( ) 12 @ VGS =10V ID (A) 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Block Diagram Features ● ● ● ● ● Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Ordering Information Part No. TSM1N60LCP RO TSM1N60LCH C5 Package TO-252 TO-251 Packing 2.5Kpcs / 13” Reel 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b Symbol VDS VGS ID IDM IS EAS PDTOT dv/dt TJ TJ, TSTG Limit 600 ±30 1 4 1 20 30 3 +150 -55 to +150 Unit V V A A A mJ W V/ns o o Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25 ) Maximum Power Dissipation @TC=25 C Peak Diode Recovery Voltage Slope Operating Junction Temperature Operating Junction and Storage Temperature Range Notes: 1. Pulse width limited by safe operating area 2. ISD≤1A, di/dt≤100A/us, VDD≤BVDSS, TJ