TSM1N60S_09

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 11 @ VGS =10V ID (A) 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Features ● ● ● ● ● Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No. TSM1N60SCT B0 TSM1N60SCT A3 Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) Total Power Dissipation @TC = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case) o a,b Symbol VDS VGS ID IDM IS EAS PDTOT TJ TJ, TSTG TL Limit 600 ±30 0.3 1.2 1 50 3 +150 -55 to +150 10 Unit V V A A A mJ o o W C C S 1/8 Version: C07 TSM1N60S 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Ambient Thermal Resistance - Junction to Case Thermal Resistance - Junction to Lead Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJA RӨJC RӨJL Limit 125 50 40 Unit o o o C/W C/W C/W Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 0.3A VDS = VGS, ID = 250uA VDS = 600V, VGS = 0V VGS = ±20V, VDS = 0V VDS ≧50V, ID = 0.3A IS = 1A, VGS = 0V Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) Min 600 -2.0 --------------- Typ -11 ---5 -4.5 1.1 2 155 20 3 10 20 25 24 Max -13 4.0 10 ± 100 -1.5 6 --200 26 4 30 50 45 60 Unit V Ω V uA nA S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 400V, ID = 1A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VGS = 10V, ID = 1A, VDS = 300V, RG = 6Ω tr td(off) nS Turn-Off Fall Time tf Notes: a. Pulse test: pulse width