TSM1N80
800V N-Channel MOSFET
TO-92 SOT-223
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V) RDS(on)( )
800 21.6 @ VGS =10V
ID (A)
0.15
General Description
The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Block Diagram
Features
● ● ● ● RDS(ON)=18 (Typ.) @ VGS=10V, ID=0.15A Low gate charge @ 5nC (Typ.) Low Crss @ 2.7pF (Typ.) Fast switching
Ordering Information
Part No.
TSM1N80SCT B0 TSM1N80SCT A3 TSM1N80CW RP
Package
TO-92 TO-92 SOT-223
Packing
1Kpcs / Bulk 2Kpcs / Ammo 2.5kpcs / 13” Reel N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current, Repetitive or Not-Repetitive (Note 1) TO-92 o Total Power Dissipation @TC = 25 C SOT-223 Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case)
Symbol
VDS VGS ID IDM EAS IAR PDTOT TJ, TSTG TL
Limit
800 ±30 0.3 1 90 1 3 2.1 -55 to +150 10
Unit
V V A A mJ A W
o
C S
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec TO-92 SOT-223
Symbol
RӨJA
Limit
130 60
Unit
o
C/W
1/9
Version: A10
TSM1N80
800V N-Channel MOSFET
Electrical Specifications (Ta=25oC, unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 1mA VGS = 10V, ID = 0.15A VDS = VGS, ID = 250uA VDS = 800V, VGS = 0V VGS = ±30V, VDS = 0V VDS =40V, ID = 0.1A IS = 0.2A, VGS = 0V
Symbol
BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on)
Min
800 -3 ---------------
Typ
-18 ---0.36 -5 1 2 155 20 2.7 10 20 16 25
Max
-21.6 5 25 ±10 -1.4 6 --200 26 4 30 50 45 60
Unit
V V uA uA S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 640V, ID = 0.3A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VGS = 10V, ID = 0.3A, VDS = 400V, RG = 25
tr td(off)
nS
Turn-Off Fall Time tf Note 1: Pulse test: pulse width
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