TSM1N80SCTB0

TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)( ) 800 21.6 @ VGS =10V ID (A) 0.15 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Block Diagram Features ● ● ● ● RDS(ON)=18 (Typ.) @ VGS=10V, ID=0.15A Low gate charge @ 5nC (Typ.) Low Crss @ 2.7pF (Typ.) Fast switching Ordering Information Part No. TSM1N80SCT B0 TSM1N80SCT A3 TSM1N80CW RP Package TO-92 TO-92 SOT-223 Packing 1Kpcs / Bulk 2Kpcs / Ammo 2.5kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current, Repetitive or Not-Repetitive (Note 1) TO-92 o Total Power Dissipation @TC = 25 C SOT-223 Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case) Symbol VDS VGS ID IDM EAS IAR PDTOT TJ, TSTG TL Limit 800 ±30 0.3 1 90 1 3 2.1 -55 to +150 10 Unit V V A A mJ A W o C S Thermal Performance Parameter Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec TO-92 SOT-223 Symbol RӨJA Limit 130 60 Unit o C/W 1/9 Version: A10 TSM1N80 800V N-Channel MOSFET Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 1mA VGS = 10V, ID = 0.15A VDS = VGS, ID = 250uA VDS = 800V, VGS = 0V VGS = ±30V, VDS = 0V VDS =40V, ID = 0.1A IS = 0.2A, VGS = 0V Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) Min 800 -3 --------------- Typ -18 ---0.36 -5 1 2 155 20 2.7 10 20 16 25 Max -21.6 5 25 ±10 -1.4 6 --200 26 4 30 50 45 60 Unit V V uA uA S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 640V, ID = 0.3A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VGS = 10V, ID = 0.3A, VDS = 400V, RG = 25 tr td(off) nS Turn-Off Fall Time tf Note 1: Pulse test: pulse width