TSM2301CX

TSM2301 -20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = -20V RDS (on), Vgs @ -4.5V, Ids @ -2.8A =130mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =190mΩ Features   Advanced trench process technology High density cell design for ultra low on-resistance   Excellent therma l and electrical capabilities Compact and low pro file SOT-23 package Block Diagram Ordering Information Part No . T S M2 3 0 1 C X Packing T a p e & Re e l Pa c k a ge SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu rrent Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 C Operating Junction Tempera ture Operating Junction and S torage Temperatu re Range o o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit -20V ±8 -2.3 -10 1.25 0.8 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Lead Temperature (1 /8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t