TSM2303
30V P-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(m )
180 @ VGS =-10V -30 300 @ VGS =-4.5V
ID (A)
-1.3 -1.1
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Portable Devices High Speed Switch
Ordering Information
Part No.
TSM2303CX RFG
Package
SOT-23
Packing
3Kpcs / 7” Reel P-Channel MOSFET
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG TA=25 C TA=75 C
Limit
-30 ±20 -1.3 -10 -1.3 0.7
Unit
V V A A A W
0.45 +150 -55 to +150
o o
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t ≤ 5 sec.
Symbol
RӨJC RӨJA
Limit
80 140
Unit
o o
C/W C/W
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Version: A11
TSM2303
30V P-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
b.c a
Conditions
VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = -30V, VGS = 0V VGS = -10V, ID = -1.3A VGS = -4.5V, ID = -1.1A VDS = -15V, ID = -1.3A IS = -1.3A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
-30 -1 -----------------
Typ
----150 250 5 -10 1.9 2 565 126 75 10 9 27 7
Max
--3 ±100 1.0 180 300 --1.2 15 ----------
Unit
V V nA µA m S V
VDS = -10V, ID = -1.3A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = -10V, RL = 15 , ID = -1A, VGEN = -4.5V,
nS
RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.
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Version: A11
TSM2303
30V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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Version: A11
TSM2303
30V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Capacitance
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Version: A11
TSM2303
30V P-Channel MOSFET
SOT-23 Mechanical Drawing
DIM A A1 B C D E F G H I J
SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º
Marking Diagram
03 = Device Code Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
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Version: A11
TSM2303
30V P-Channel MOSFET
Notice
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Version: A11