TSM2305

TSM2305

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSM2305 - 20V P-Channel MOSFET - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSM2305 数据手册
TSM2305 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(m ) 52 @ VGS =-4.5V -20 71 @ VGS =-2.5V 108 @ VGS =-1.8V ID (A) -3.2 -2.7 -2.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Battery Management High Speed Switch Ordering Information Part No. TSM2305CX RFG Package SOT-23 Packing 3Kpcs / 7” Reel P-Channel MOSFET Note: “G” denotes Halogen Free Product. Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG TA=25 C TA=75 C Limit -20 ±8 -3.2 -10 -1 1.25 Unit V V A A A W 0.8 +150 -55 to +150 o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t ≤ 10 sec. Symbol RӨJC RӨJA Limit 80 150 Unit o o C/W C/W 1/6 Version: B11 TSM2305 20V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Diode Forward Voltage b Dynamic Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching b.c Conditions VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±8V, VDS = 0V VDS = -16V, VGS = 0V VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -2.7A VGS = -1.8V, ID = -2.0A IS = -1A, VGS = 0V VGS = VDS =0V, f=1MHz VDS = -10V, ID = -3.2A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0MHz Symbol BVDSS VGS(TH) IGSS IDSS RDS(ON) VSD Rg Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -20 -0.45 ------------------ Typ --0.7 --44 65 90 -0.8 10 10 0.7 4 990 125 100 12 23 50 18 Max --1 ±100 1.0 52 71 108 -1.3 -20 -----24 50 100 35 Unit V V nA µA m V nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -10V, RL = 15 , ID = -1A, VGEN = -4.5V, nS RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/6 Version: B11 TSM2305 20V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: B11 TSM2305 20V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Capacitance Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: B11 TSM2305 20V P-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.25 2.55 0.089 0.100 1.20 1.40 0.047 0.055 2.80 3.00 0.110 0.118 0.90 1.15 0.035 0.045 0.00 0.10 0.000 0.004 0.30 0.50 0.012 0.020 0.08 0.15 0.003 0.006 0.30 0.50 0.012 0.020 5º 10º 5º 10º Marking Diagram 05 = Device Code Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: B11 TSM2305 20V P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B11
TSM2305
1. 物料型号: - 型号为TSM2305,是一个20V P-Channel MOSFET。

2. 器件简介: - TSM2305是一款采用先进沟槽工艺技术的P沟道MOSFET,具有高密度单元设计,用于超低导通电阻。

3. 引脚分配: - 1. Gate(栅极) - 2. Source(源极) - 3. Drain(漏极)

4. 参数特性: - 最大漏源电压(Drain-Source Voltage):-20V - 栅源电压(Gate-Source Voltage):+8V - 连续漏电流(Continuous Drain Current):-3.2A - 脉冲漏电流(Pulsed Drain Current):-10A - 连续源电流(Continuous Source Current):-1A - 最大功耗(TA=25°C Maximum Power Dissipation TA=75°C):1.25W/0.8W - 工作结温(Operating Junction Temperature):+150°C - 存储和工作温度范围(Operating Junction and Storage Temperature Range):-55 to +150°C

5. 功能详解: - 该器件适用于电池管理和高速开关应用。

6. 应用信息: - 电池管理、高速开关。

7. 封装信息: - 封装类型为SOT-23,包装为3Kpcs/7" Reel。 - 标记代码解释:05 = 设备代码 = 年份代码,M = 无卤产品(月份代码),L = 批次代码。
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